40K cryogenic rad-hard CMOS readout multiplexer fabrication process

Damian Carver; John T. Gasner; Terry M. Pierce; N. van Vonno; M. Coole; Allen W. Hairston; Randy Wilder; Frank B. Jaworski

doi:10.1117/12.178471

23 June 1994 40K cryogenic rad-hard CMOS readout multiplexer fabrication process

Damian Carver, John T. Gasner, Terry M. Pierce, N. van Vonno, M. Coole, Allen W. Hairston, Randy Wilder, Frank B. Jaworski

Author Affiliations +

Proceedings Volume 2226, Infrared Readout Electronics II; (1994) https://doi.org/10.1117/12.178471
Event: SPIE's International Symposium on Optical Engineering and Photonics in Aerospace Sensing, 1994, Orlando, FL, United States

Abstract

Cryogenic signal processing and A/D conversion for the IR imaging and high energy physics experiment applications place severe demands on the silicon process involved, particularly in ionizing radiation environments. This paper describes a process specifically optimized for operation in the 40 K - 77 K temperature range in a total dose environment. Trade-offs of hardness, supply voltage and hot electron vulnerability are discussed and preliminary device- level results are shown.

Citation Download Citation

Damian Carver, John T. Gasner, Terry M. Pierce, N. van Vonno, M. Coole, Allen W. Hairston, Randy Wilder, and Frank B. Jaworski "40K cryogenic rad-hard CMOS readout multiplexer fabrication process", Proc. SPIE 2226, Infrared Readout Electronics II, (23 June 1994); https://doi.org/10.1117/12.178471

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