Paper
28 July 1994 Device integration on indium phosphide for photonic switching applications
Jean-Luc Peyre, E. Boucherez, A. Goutelle, B. Martin, Jean-Francois Vinchant, Monique Renaud
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Abstract
The development of broadband telecommunication networks has led to a growing interest in photonic devices so that monolithic integration on InP material has been intensively studied to get miniaturization, high complexity, advanced functions and consequently cost reduction. We illustrate in this paper the continuous progress that has been done to make technology mature enough for integration through the fabrication of two types of Photonic Integrated Circuits: a 4 X 4 switch matrix and a multifunctional access node switch.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jean-Luc Peyre, E. Boucherez, A. Goutelle, B. Martin, Jean-Francois Vinchant, and Monique Renaud "Device integration on indium phosphide for photonic switching applications", Proc. SPIE 2213, Nanofabrication Technologies and Device Integration, (28 July 1994); https://doi.org/10.1117/12.180965
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KEYWORDS
Switches

Etching

Mirrors

Waveguides

Sensors

Photomasks

Reactive ion etching

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