Paper
17 May 1994 Deep-UV photolithography cluster performance
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Abstract
As minimum feature size has decreased, and design rules have tightened, successful deep UV 0.35 micron technology has required a photolithography cluster. Linkage of the lithography exposure tool with the critical apply and develop process is driven by the need to improve cycle time, minimize defects, and optimize image tolerances. This paper summarizes results from Micrascan II photo clusters, and discusses the directions in which photo clusters must continue to evolve in order to satisfy the needs for 0.35 micron, and succeeding generations, of imaging technology.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Noreen Harned "Deep-UV photolithography cluster performance", Proc. SPIE 2197, Optical/Laser Microlithography VII, (17 May 1994); https://doi.org/10.1117/12.175487
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KEYWORDS
Deep ultraviolet

Critical dimension metrology

Metrology

Control systems

Lithography

Optical lithography

Reticles

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