Technique for the measurement of the in-situ development rate

Patrick G. Drennan; Bruce W. Smith; David W. Alexander

doi:10.1117/12.174145

1 May 1994 Technique for the measurement of the in-situ development rate

Patrick G. Drennan, Bruce W. Smith, David W. Alexander

Proceedings Volume 2196, Integrated Circuit Metrology, Inspection, and Process Control VIII; (1994) https://doi.org/10.1117/12.174145
Event: SPIE's 1994 Symposium on Microlithography, 1994, San Jose, CA, United States

Abstract

Using a site services development spray monitor (DSM 100) and a post processing algorithm, the in-situ measured development rates of photoresist were obtained. The interference signals for eight different wavelengths were simultaneously monitored on a patterned wafer as it spun on the development module of a wafer track. Since the interference signal is generated from a circularly polarized light source, the DSM 100 has demonstrated robustness to the red cloud effect, developer spray, bubbles in the developer, and ambient light. After collecting the eight interference curves, these post processing algorithms used the Marquardt Levenberg non- linear regression algorithm and a linear regression approach to find the development rate as a function of development time. The first approach generated the better curve. A plot of development rate versus depth was generated via numerical integration of the plot of development rate versus time. This technique is equally well suited for other types of exposure and resist chemistries.

Citation Download Citation

Patrick G. Drennan, Bruce W. Smith, and David W. Alexander "Technique for the measurement of the in-situ development rate", Proc. SPIE 2196, Integrated Circuit Metrology, Inspection, and Process Control VIII, (1 May 1994); https://doi.org/10.1117/12.174145

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