Critical dimension measurement in the SEM: comparison of backscattered vs. secondary electron detection

Neal T. Sullivan; Robert M. Newcomb

doi:10.1117/12.174120

1 May 1994 Critical dimension measurement in the SEM: comparison of backscattered vs. secondary electron detection

Neal T. Sullivan, Robert M. Newcomb

Proceedings Volume 2196, Integrated Circuit Metrology, Inspection, and Process Control VIII; (1994) https://doi.org/10.1117/12.174120
Event: SPIE's 1994 Symposium on Microlithography, 1994, San Jose, CA, United States

Abstract

Critical dimension measurements for state of the art sub-micron semiconductor processes are typically accomplished using automated scanning electron microscopes. The measurements generated in these instruments are primarily based upon secondary electron imaging techniques. Several issues associated with this mode of SEM imaging that directly impact the precision and accuracy of the measurement system are reviewed. These issues have led to the current investigation of SEM metrology utilizing backscattered electron imaging techniques. The implications and differences between SE and BSE imaging techniques and their relation to CD measurements are discussed in this work.

Citation Download Citation

Neal T. Sullivan and Robert M. Newcomb "Critical dimension measurement in the SEM: comparison of backscattered vs. secondary electron detection", Proc. SPIE 2196, Integrated Circuit Metrology, Inspection, and Process Control VIII, (1 May 1994); https://doi.org/10.1117/12.174120

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