I-line negative resist (INR): a negative-tone I-line chemically amplified photoresist

Leo L. Linehan; Gary T. Spinillo; Randolph S. Smith; Wayne M. Moreau; Barry C. McCormick; Robert L. Wood; Erik A. Puttlitz; James P. Collins; William J. Miller

doi:10.1117/12.175347

16 May 1994 INR negative resist: a negative-tone I-line chemically amplified photoresist

Leo L. Linehan, Gary T. Spinillo, Randolph S. Smith, Wayne M. Moreau, Barry C. McCormick, Robert L. Wood, Erik A. Puttlitz, James P. Collins, William J. Miller

Author Affiliations +

Proceedings Volume 2195, Advances in Resist Technology and Processing XI; (1994) https://doi.org/10.1117/12.175347
Event: SPIE's 1994 Symposium on Microlithography, 1994, San Jose, CA, United States

Abstract

INR, an I-line negative photoresist, is described. Acid catalyzed cross-linking of phenolic resins using a non-metallic photoacid generator, 2,6-bishydroxymethyl-p-cresol as a cross- linker, and 9-anthracene methanol as an I-line sensitizer results in a very high photospeed aqueous TMAH developable photoresist. Poly(p-hydroxystyrene) was found to have advantages over novolac resins for formulation of high performance negative I-line photoresist. Advantages obtained by using PHS rather than novolac include higher thermal stability, elimination of undercut on nuleophilic surfaces and compatibility with 2.38 percent TMAH puddle develop processes. A high resolution version, INR-X, is described. Resolution to 0.30 micrometers and linearity to 0.35 micrometers was obtained using a 0.54NA ASML I-line stepper. 0.35 micrometers line-spaces arrays had 1.2 micrometers depth of focus and 0.40 micrometers line-space arrays had a depth of focus greater than 1.6 micrometers . An unusual characteristic found in INR-X is a very low sensitivity to variation in PEB temperature. A 3nm/ degree(s)C line-width dependency was found.

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Leo L. Linehan, Gary T. Spinillo, Randolph S. Smith, Wayne M. Moreau, Barry C. McCormick, Robert L. Wood, Erik A. Puttlitz, James P. Collins, and William J. Miller "INR negative resist: a negative-tone I-line chemically amplified photoresist", Proc. SPIE 2195, Advances in Resist Technology and Processing XI, (16 May 1994); https://doi.org/10.1117/12.175347

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