Feasibility Study Of Charge Transfer Devices In HgCdTe/CdTe Heterostructures

M. E. Kim; G. M. Williams; S H. Shin; M. Chu; J. Cheung; J C. Kim; C. C. Wang

doi:10.1117/12.958481

7 May 1980 Feasibility Study Of Charge Transfer Devices In HgCdTe/CdTe Heterostructures

M. E. Kim, G. M. Williams, S H. Shin, M. Chu, J. Cheung, J C. Kim, C. C. Wang

Proceedings Volume 0217, Advances in Focal Plane Technology; (1980) https://doi.org/10.1117/12.958481
Event: 1980 Los Angeles Technical Symposium, 1980, Los Angeles, United States

Abstract

Advances in epitaxial hgCdTe/CdTe material technology such as high crystalline quality and surface morphology have motivated the study of MIS devices and the current development of CCDs in these heterostructures. Results of MIS device studies in n-and p-type HgCdTe/CdTe structures are presented. Annealing in Hg atmosphere was used to obtain n 10¹⁴ cm^-3 and p 5 x 10¹⁵ cm³. A native oxide passivation used in conjunction with ZnS has yielded high-integrity MIS interfaces for n-type epilayers. For p-type HgCdTe/CdTe, n⁺/p junction technology and ZnS passivation have been used to demonstrate enhancement-mode MISFETs. These results indicate the feasibility of MISCCDs in HgCdTe/CdTe structures, with particularly attractive features in n-channel (p-type) devices.

Citation Download Citation

M. E. Kim, G. M. Williams, S H. Shin, M. Chu, J. Cheung, J C. Kim, and C. C. Wang "Feasibility Study Of Charge Transfer Devices In HgCdTe/CdTe Heterostructures", Proc. SPIE 0217, Advances in Focal Plane Technology, (7 May 1980); https://doi.org/10.1117/12.958481

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