Paper
30 June 1994 Geometry considerations for more stable laser beam from semiconductor laser and amplifier
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Abstract
Power limitations are considered in semiconductor lasers of different configuration emitting a light beam which is not distorted by optical nonlinear processes. A simple approach is used to obtain estimations of the power threshold for the self- focusing in 1D and 2D geometry. It is shown that the multielement nonguided configuration may have advantage in the emission of the most powerful stable laser beam.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Petr Georgievich Eliseev "Geometry considerations for more stable laser beam from semiconductor laser and amplifier", Proc. SPIE 2146, Physics and Simulation of Optoelectronic Devices II, (30 June 1994); https://doi.org/10.1117/12.178533
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KEYWORDS
Semiconductor lasers

Optical amplifiers

Laser damage threshold

Nonlinear optics

Refractive index

Semiconductors

Gallium arsenide

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