Effects of P4 annealing on ordered Ga0.52In0.48P

Xiaoming Yin; Matthew C. DeLong; Q. Li; P. Craig Taylor; Hei-Ruey H. Jen; Jeannie E. Williams; Kathleen Meehan

doi:10.1117/12.176858

26 May 1994 Effects of P₄ annealing on ordered Ga_0.52In_0.48P

Xiaoming Yin, Matthew C. DeLong, Q. Li, P. Craig Taylor, Hei-Ruey H. Jen, Jeannie E. Williams, Kathleen Meehan

Proceedings Volume 2141, Spectroscopic Characterization Techniques for Semiconductor Technology V; (1994) https://doi.org/10.1117/12.176858
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

We present results of an investigation of the details of the disordering process die to P₄ annealing for Ga_0.52In_0.48P grown in ordered configurations with large and small macro-domain sizes. The effects of P₄ annealing (710 degree(s)C) were monitored as a function of isothermal annealing time by transmission electron microscopy (TEM), photoreflectance (PR), and photoluminescence (PL). During the annealing process the band gap and PL emission energies characteristic of the disordered phase of the sample grow while those of the ordered phase decay, rather than undergoing a continuous energy change. The disordering, indicated by TEM photographs, is found to proceed downward from the free surface of the epilayer and to propagate into the bulk with a well-defined boundary rather than occurring simultaneously throughout the bulk of the layer. This disordering process is consistent with the combined results of PR and PL. The rate at which the disordering occurs is found to be much greater for samples initially having larger domains.

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Xiaoming Yin, Matthew C. DeLong, Q. Li, P. Craig Taylor, Hei-Ruey H. Jen, Jeannie E. Williams, and Kathleen Meehan "Effects of P₄ annealing on ordered Ga_0.52In_0.48P", Proc. SPIE 2141, Spectroscopic Characterization Techniques for Semiconductor Technology V, (26 May 1994); https://doi.org/10.1117/12.176858

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