Mechanism of the carrier recombination in semiconductor dots

Jim P. Zheng; HoiSing Kwok

doi:10.1117/12.175720

11 May 1994 Mechanism of the carrier recombination in semiconductor dots

Jim P. Zheng, HoiSing Kwok

Proceedings Volume 2139, Quantum Well and Superlattice Physics V; (1994) https://doi.org/10.1117/12.175720
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

The time-resolved photoluminescence of semiconductor doped glasses was obtained as a function of laser excitation intensity at a low temperature. At laser intensities lower than 3.3 X 10⁵ W/cm², only the exciton recombination with a lifetime of 4 ns was obtained. When the laser intensity was increased, the biexciton recombination with a lifetime of about 1 ns was observed. At very high laser intensities, the free carrier recombination with a much shorter lifetime dominated. Relative intensities of photoluminescence contributed from excitons, biexcitons, and free carriers were estimated from the laser intensity distribution in the semiconductor doped glass and agree with experimental results.

Citation Download Citation

Jim P. Zheng and HoiSing Kwok "Mechanism of the carrier recombination in semiconductor dots", Proc. SPIE 2139, Quantum Well and Superlattice Physics V, (11 May 1994); https://doi.org/10.1117/12.175720

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