Raman scattering (RS) and photoluminescence (PL) study of AlGaAs films grown from Ga-Bi-Al solution-melt by LPE

S. A. Vasilkovskii; Yu. Yu Bacherikov; Semen I. Krukovskii

doi:10.1117/12.191978

31 October 1994 Raman scattering (RS) and photoluminescence (PL) study of AlGaAs films grown from Ga-Bi-Al solution melt by LPE

S. A. Vasilkovskii, Yu. Yu Bacherikov, Semen I. Krukovskii

Author Affiliations +

Proceedings Volume 2113, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics; (1994) https://doi.org/10.1117/12.191978
Event: Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics: International Workshop, 1993, Kiev, Ukraine

Abstract

The use of Raman scattering and low temperatures photoluminescence is used to characterize the properties of thin n-AlGaAs films grown from Ga-Bi-Al solution-melt by LPE on SI GaAs substrates. By using these optical methods the Al concentration dependence for AlGaAs films with change of Bi concentration and for two fixed Al concentrations were obtained.

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S. A. Vasilkovskii, Yu. Yu Bacherikov, and Semen I. Krukovskii "Raman scattering (RS) and photoluminescence (PL) study of AlGaAs films grown from Ga-Bi-Al solution melt by LPE", Proc. SPIE 2113, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (31 October 1994); https://doi.org/10.1117/12.191978

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