About use of the induced anti-ferromagnetic ordering effecting ShF devices

V. N. Polupanov

doi:10.1117/12.2298646

30 August 1993 About use of the induced anti-ferromagnetic ordering effecting ShF devices

V. N. Polupanov

Proceedings Volume 2104, 18th International Conference on Infrared and Millimeter Waves; 21045Y (1993) https://doi.org/10.1117/12.2298646
Event: 18th International Conference on Infrared and Millimeter Waves, 1993, Colchester, United Kingdom

Abstract

The antiferromagnetic ordering effect in iron borate FeB03 by weak (to 0,1T)external field H was observed at the frequency 300 GHz at the room temperature.The losses on AFMR line, with width -1%, increased or decreased depending on geometry H-I-k or Hp respectively, but remained small and constant at the neithbouring frequencies. Such properties of monocrystals FeB03 enable to create nonreciprocal and modulation devices in the mm and submm ranges of radiowaves.

Citation Download Citation

V. N. Polupanov "About use of the induced anti-ferromagnetic ordering effecting ShF devices", Proc. SPIE 2104, 18th International Conference on Infrared and Millimeter Waves, 21045Y (30 August 1993); https://doi.org/10.1117/12.2298646

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