Real-time feedback control of reactive ion etching

Michael E. Elta; J. P. Fournier; James S. Freudenberg; M. D. Giles; Jessy W. Grizzle; Pramod P. Khargonekar; Brian A. Rashap; Fred Lewis Terry Jr.; T. Vincent

doi:10.1117/12.167364

15 February 1994 Real-time feedback control of reactive ion etching

Michael E. Elta, J. P. Fournier, James S. Freudenberg, M. D. Giles, Jessy W. Grizzle, Pramod P. Khargonekar, Brian A. Rashap, Fred Lewis Terry Jr., T. Vincent

Author Affiliations +

Proceedings Volume 2091, Microelectronic Processes, Sensors, and Controls; (1994) https://doi.org/10.1117/12.167364
Event: Microelectronic Processing '93, 1993, Monterey, CA, United States

Abstract

This paper explores the application of modern feedback control technology to the regulation of the reactive ion etching process. Currently, this process is run open-loop, except for the PID controller to regulate pressure. We investigate the utility of additional measurements for the purpose of feedback control to improve process performance and robustness. First, we compare a feedback controller that regulates V_bias and chamber pressure to one that regulates V_bias and fluorine. We show that the fluorine controller yields better control of etch rate; this result is to be expected since fluorine is more closely related to the chemical etching process than is pressure. Our second study compares various controllers that regulate V_bias and fluorine using the conductance throttle and applied RF power. We show that multivariable feedback controllers that can compensate for process coupling by coordinating control inputs have advantages over decentralized controllers consisting of two independent feedback loops.

Citation Download Citation

Michael E. Elta, J. P. Fournier, James S. Freudenberg, M. D. Giles, Jessy W. Grizzle, Pramod P. Khargonekar, Brian A. Rashap, Fred Lewis Terry Jr., and T. Vincent "Real-time feedback control of reactive ion etching", Proc. SPIE 2091, Microelectronic Processes, Sensors, and Controls, (15 February 1994); https://doi.org/10.1117/12.167364

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