Electrical sensors for monitoring rf plasma sheaths

Mark A. Sobolewski; James K. Olthoff

doi:10.1117/12.167350

15 February 1994 Electrical sensors for monitoring rf plasma sheaths

Mark A. Sobolewski, James K. Olthoff

Proceedings Volume 2091, Microelectronic Processes, Sensors, and Controls; (1994) https://doi.org/10.1117/12.167350
Event: Microelectronic Processing '93, 1993, Monterey, CA, United States

Abstract

We have investigated the use of radio-frequency (rf) current and voltage measurements to monitor the electrical characteristics of rf plasmas and to predict changes in ion kinetic energy distributions. These studies were performed at 2.7 and 13.3 Pa (20 and 100 mTorr) in a Gaseous Electronics Conference RF Reference Cell in mixtures of argon with oxygen, nitrogen and water. It is expected that the measurement techniques described here could be extended to monitor the sheath above a wafer during plasma etching to obtain information about changes in the condition of the wafer surface and the energies of ions bombarding it.

Citation Download Citation

Mark A. Sobolewski and James K. Olthoff "Electrical sensors for monitoring rf plasma sheaths", Proc. SPIE 2091, Microelectronic Processes, Sensors, and Controls, (15 February 1994); https://doi.org/10.1117/12.167350

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