Development of reliable multilayer metallization for submicron ULSI technology

Arthur T. Kuo; Ratan K. Choudhury; William Hata

doi:10.1117/12.156529

15 September 1993 Development of reliable multilayer metallization for submicron ULSI technology

Arthur T. Kuo, Ratan K. Choudhury, William Hata

Proceedings Volume 2090, Multilevel Interconnection: Issues That Impact Competitiveness; (1993) https://doi.org/10.1117/12.156529
Event: Microelectronic Processing '93, 1993, Monterey, CA, United States

Abstract

In this paper, various multilayer metallization schemes for 0.5 micrometers CMOS technology are studied. Experimental results show that multilayer interconnect consisting of AlCu on Ti/TiN barrier layer has superior electromigration resistance as compared to that deposited on single TiN film. The application of an advanced wafer-level reliability test enables us to investigate grain boundary diffusion controlled electromigration phenomenon. The microstructural properties of the metallizations are also characterized by x-ray diffraction and scanning electron microscope. The stress migration resistance is also studied using high temperature storage at 175 degree(s)C and thermal cycle treatment at 450 degree(s)C.

Citation Download Citation

Arthur T. Kuo, Ratan K. Choudhury, and William Hata "Development of reliable multilayer metallization for submicron ULSI technology", Proc. SPIE 2090, Multilevel Interconnection: Issues That Impact Competitiveness, (15 September 1993); https://doi.org/10.1117/12.156529

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