Paper
5 January 1994 Lateral mode analysis of a broad-area laser operated with an external cavity
Sylvain Mailhot, Yves Champagne, Bernard Doyon, Nathalie McCarthy
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Abstract
An analysis of the lateral-mode behavior of broad-area semiconductor lasers operating with a simple external-cavity configuration is presented. A numerical approach is employed for propagating the optical field around the external-cavity resonator, as well as for the calculation of realistic carrier-density profiles inside the active region of the broad-area laser. By slightly detuning the position of the laser relative to the collimation lens, it is shown that the lateral- mode selectivity can be significantly enhanced compared to that of a free-running broad-area laser. The lateral-mode selectivity and the shape of the far field radiation pattern emitted from the external mirror are found to depend heavily upon the separation between the external mirror and the collimation lens. The calculations also revealed that output powers of a few hundreds mW can be emitted in a single-lateral-mode output beam for configurations maximizing the lateral-mode selectivity.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sylvain Mailhot, Yves Champagne, Bernard Doyon, and Nathalie McCarthy "Lateral mode analysis of a broad-area laser operated with an external cavity", Proc. SPIE 2041, Mode-locked and Other Ultrashort Laser Designs, Amplifiers, and Applications, (5 January 1994); https://doi.org/10.1117/12.165641
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KEYWORDS
Mirrors

Collimation

Semiconductor lasers

Near field

Laser beam propagation

Laser resonators

Laser damage threshold

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