Paper
7 December 1993 Normal-incidence quantum-well infrared photodetectors utilizing ellipsoidal valley intersubband transitions in n-type GaSb-AlSb multiquantum wells
Lorene A. Samoska, Berinder Brar, Herbert Kroemer
Author Affiliations +
Abstract
We report on the observation of normal incidence IR photoconductive detector response in ellipsoidal valley n-type GaSb-AlSb multi-quantum well samples, grown on (001) GaAs substrates by molecular beam epitaxy. Photoconductors were fabricated and IR detector response was measured using Fourier transform IR spectroscopy. Detector response was observed in the long wavelength IR band at (lambda) equals 8.5 micrometers for an operating temperature of T equals 77 K, and agrees well with absorption data. We also show preliminary results on a method for extending the intersubband transition energies to longer wavelength.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lorene A. Samoska, Berinder Brar, and Herbert Kroemer "Normal-incidence quantum-well infrared photodetectors utilizing ellipsoidal valley intersubband transitions in n-type GaSb-AlSb multiquantum wells", Proc. SPIE 2021, Growth and Characterization of Materials for Infrared Detectors, (7 December 1993); https://doi.org/10.1117/12.164938
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KEYWORDS
Sensors

Absorption

Quantum wells

Electrons

Gallium antimonide

Solar energy

FT-IR spectroscopy

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