Super-resolution-lithography from viewpoint of partially coherent imaging theory

R. Hild

doi:10.1117/12.2308502

26 July 1993 Super-resolution-lithography from viewpoint of partially coherent imaging theory

R. Hild

Proceedings Volume 1983, 16th Congress of the International Commission for Optics: Optics as a Key to High Technology; 19832B (1993) https://doi.org/10.1117/12.2308502
Event: 16th Congress of the International Commission for Optics: Optics as a Key to High Technology, 1993, Budapest, Hungary

Abstract

Line widths of about 0,3 gm and focus depths of 1,3 pm are necessary for the production of 64 M DRAM's. The aim of circuit producers is to achive these parameters with i-line equipment of optical projektion lithography ( A = 365 nm, NA ek 0,5). The resolution limit w and depth of focus 4 z for lithographic systems are given by

Citation Download Citation

R. Hild "Super-resolution-lithography from viewpoint of partially coherent imaging theory", Proc. SPIE 1983, 16th Congress of the International Commission for Optics: Optics as a Key to High Technology, 19832B (26 July 1993); https://doi.org/10.1117/12.2308502

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