Thermal comparison of emissive infrared projector devices

Owen M. Williams; Geoffrey K. Reeves

doi:10.1117/12.151032

13 August 1993 Thermal comparison of emissive infrared projector devices

Owen M. Williams, Geoffrey K. Reeves

Proceedings Volume 1967, Characterization, Propagation, and Simulation of Sources and Backgrounds III; (1993) https://doi.org/10.1117/12.151032
Event: Optical Engineering and Photonics in Aerospace Sensing, 1993, Orlando, FL, United States

Abstract

The three emissive technologies--thin film resistor, silicon bridge resistor and suspended membrane resistor--currently being investigated for dynamic infrared projection applications are thermally compared and contrasted. It is shown that the technologies may be compared quantitatively in terms of both the strong power/speed trade-off that exists and the maximum effective blackbody temperature capability. The suspended membrane technology is shown to be superior in thermal terms, followed by the thin films technology which is found to be practical for high speed small array applications, or for large array applications provided that only small levels of effective blackbody temperature are required. In comparison, it is found that the capability of the silicon bridge technology is constrained in thermal terms both by the comparatively high thermal conductivity of silicon and by the small values of fill factor inherent to the technology.

Citation Download Citation

Owen M. Williams and Geoffrey K. Reeves "Thermal comparison of emissive infrared projector devices", Proc. SPIE 1967, Characterization, Propagation, and Simulation of Sources and Backgrounds III, (13 August 1993); https://doi.org/10.1117/12.151032

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