Paper
15 November 1993 Electron-bombarded silicon avalanche diode PMT development
C. Bruce Johnson, Mike J. Iosue, R. Rusack, P. Cushman
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Abstract
A 16 mm active diameter photomultiplier tube (PMT) having an electron-bombarded silicon avalanche diode electron multiplier is shown to have promise as a replacement for PMTs with conventional discrete dynode or channel electron multipliers. Any type of conventional photocathode, e.g. uv-sensitive, bialkali or multialkali types, as well as negative electron affinity GaAs types can be used. The full potential of the high detective quantum efficiency of the GaAs cathode can be realized for the first time in a photoelectronic detector because of the nearly complete utilization of the photoelectrons. Key performance characteristics are gain to about 1E6 e/e, linear dynamic range for dc operation to about 1E6, insensitivity to strong magnetic fields, and a counting efficiency of about 80%.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. Bruce Johnson, Mike J. Iosue, R. Rusack, and P. Cushman "Electron-bombarded silicon avalanche diode PMT development", Proc. SPIE 1952, Surveillance Technologies and Imaging Components, (15 November 1993); https://doi.org/10.1117/12.161412
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KEYWORDS
Avalanche photodiodes

Silicon

Diodes

Gallium arsenide

Quantum efficiency

Sensors

Silicon photomultipliers

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