Paper
15 November 1993 512 x 512 frame transfer and storage imaging device with tin oxide gates and open-pinned phase technology
Robert Thomas Tacka, Leroy C. Colquitt, Bron R. Frias, Eric S. Juergensen, Arlene A. Santos, Eugene V. Thompson, Alfred P. Turley
Author Affiliations +
Abstract
A versatile high performance Frame Transfer and Storage imaging device has been demonstrated using tin oxide gates and Open Pinned Phase (OPP) technology. The device consists of a 512 X 512 imaging array and integral 512 X 512 frame buffer. The detector size is 18 micrometers X 18 micrometers , however, pixel size is electronically controllable by detector aggregation in the X and Y directions. The use of tin oxide gates and OPP technology provide a front side illuminated device with high Quantum Efficiency and low leakage. This combination of features yields a mechanically robust high resolution imager, ideally suited for military, scientific, and commercial applications requiring high sensitivity and/or long stare times.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Robert Thomas Tacka, Leroy C. Colquitt, Bron R. Frias, Eric S. Juergensen, Arlene A. Santos, Eugene V. Thompson, and Alfred P. Turley "512 x 512 frame transfer and storage imaging device with tin oxide gates and open-pinned phase technology", Proc. SPIE 1952, Surveillance Technologies and Imaging Components, (15 November 1993); https://doi.org/10.1117/12.161420
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KEYWORDS
Oxides

Tin

Quantum efficiency

Sensors

Charge-coupled devices

Imaging devices

Cameras

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