Fabrication of submicron GaAs Schottky diodes for mixers/detectors operating in the submillimetre wave region

T. Suzuki

doi:10.1117/12.2298222

14 December 1992 Fabrication of submicron GaAs Schottky diodes for mixers/detectors operating in the submillimetre wave region

T. Suzuki

Author Affiliations +

Proceedings Volume 1929, 17th International Conference on Infrared and Millimeter Waves; 19292X (1992) https://doi.org/10.1117/12.2298222
Event: 17th International Conference on Infrared and Millimeter Waves, 1992, Pasadena, CA, United States

Abstract

Low noise and high video sensitivity mixers/detectors operating in the submillimetre wave region have been developed. These devices use an 0.4Ã‚Âµm diameter GaAs Schottky barrier diode as the mixing/detecting element. Electron beam lithography and electron cyclotron resonance plasma etching are employed in the fabrication process.

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T. Suzuki "Fabrication of submicron GaAs Schottky diodes for mixers/detectors operating in the submillimetre wave region", Proc. SPIE 1929, 17th International Conference on Infrared and Millimeter Waves, 19292X (14 December 1992); https://doi.org/10.1117/12.2298222

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