Paper
15 September 1993 Simulation of self-diffusion effects of silylated polymers during dry development
Ulrich A. Jagdhold, Hartmut H. Erzgraeber
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Abstract
A model is presented to study self diffusion effects of silylated polymers during dry development. The effect is discussed in connection with mechanisms of the formation of the oxide mask during different O2-RIE conditions. Furthermore, the influence on the CD control is outlined.
© (1993) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ulrich A. Jagdhold and Hartmut H. Erzgraeber "Simulation of self-diffusion effects of silylated polymers during dry development", Proc. SPIE 1925, Advances in Resist Technology and Processing X, (15 September 1993); https://doi.org/10.1117/12.154805
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KEYWORDS
Etching

Diffusion

Silicon

Polymers

Oxygen

Oxidation

Oxides

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