Stable ultraviolet antirelection coatings for charge-coupled devices

Morley M. Blouke; Mark D. Nelson

doi:10.1117/12.148601

12 July 1993 Stable ultraviolet antirelection coatings for charge-coupled devices

Morley M. Blouke, Mark D. Nelson

Proceedings Volume 1900, Charge-Coupled Devices and Solid State Optical Sensors III; (1993) https://doi.org/10.1117/12.148601
Event: IS&T/SPIE's Symposium on Electronic Imaging: Science and Technology, 1993, San Jose, CA, United States

Abstract

In this paper we report on recent work on the development of a stable ultraviolet sensitive antireflection coating for use on charge-coupled devices. The coatings that are discussed in this paper are single layer Si₃N₄ and a dual layer Si₃N₄/MgF₂ coating. Both coatings provide excellent quantum efficiencies at 300 nm (> 50 - 60%) and useful response down to 200 nm (the limit of the measurement capability). Ultraviolet (UV) flooding is shown to be effective in increasing the quantum efficiency. The films demonstrate a long time constant decay of the UV enhanced quantum efficiency which is of the order of months at room temperature. A simple model of a thermally activated process to characterize the decay in quantum efficiency has been developed.

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Morley M. Blouke and Mark D. Nelson "Stable ultraviolet antirelection coatings for charge-coupled devices", Proc. SPIE 1900, Charge-Coupled Devices and Solid State Optical Sensors III, (12 July 1993); https://doi.org/10.1117/12.148601

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KEYWORDS

Quantum efficiency

Ultraviolet radiation

Charge-coupled devices

Antireflective coatings

Silicon

Oxides

Reflectivity

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