Isolated gate bipolar transistors (IGBT): a solid state switch

D. Chatroux; J. Maury; B. Hennevin

doi:10.1117/12.145506

28 May 1993 Isolated gate bipolar transistors (IGBT): a solid state switch

D. Chatroux, J. Maury, B. Hennevin

Proceedings Volume 1859, Laser Isotope Separation; (1993) https://doi.org/10.1117/12.145506
Event: OE/LASE'93: Optics, Electro-Optics, and Laser Applications in Scienceand Engineering, 1993, Los Angeles, CA, United States

Abstract

A Copper Vapor Laser Power Supply has been designed using a solid state switch consisting in eighteen Isolated Gate Bipolar Transistors (IGBT),--1200 volts, 400 Amps, each--in parallel. This paper presents the Isolated Gate Bipolar Transistor (IGBTs) replaced in the Power Electronic components evolution, and describes the IGBT conduction mechanism, presents the parallel association of IGBTs, and studies the application of these components to a Copper Vapor Laser Power Supply. The storage capacitor voltage is 820 Volts, the peak current of the solid state switch is 17,000 Amps. The switch is connected on the primary of a step-up transformer, followed by a magnetic modulator. The reset of the magnetic modulator is provided by part of the laser reflected energy with a patented circuit. The charging circuit is a resonance circuit with a charge controlled by an IGBT switch. When the switch is open, the inductance energy is free-wheeled by an additional winding and does not extend the charging phase of the storage capacitor. The design allows the storage capacitor voltage to be very well regulated. This circuit is also patented. The electric pulse in the laser has 30,000 Volt peak voltage, 2000 Amp peak current, and is 200 nanoseconds long, for a 200 Watt optical power Copper Vapor Laser.

Citation Download Citation

D. Chatroux, J. Maury, and B. Hennevin "Isolated gate bipolar transistors (IGBT): a solid state switch", Proc. SPIE 1859, Laser Isotope Separation, (28 May 1993); https://doi.org/10.1117/12.145506

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