Preparation and testing of InSb CID FPA: isolation oxide prepared by   radio-frequency chemical vapor deposition and photoactivated CVD

Joseph B. Underwood; Chih-Hong Chen

doi:10.1117/12.131291

26 October 1992 Preparation and testing of InSb CID FPA: isolation oxide prepared by radio-frequency chemical vapor deposition and photoactivated CVD

Joseph B. Underwood, Chih-Hong Chen

Author Affiliations +

Proceedings Volume 1814, Optical Sensors; (1992) https://doi.org/10.1117/12.131291
Event: International Symposium on Optoelectronics in Computers, Communications, and Control, 1992, Hsinchu, Taiwan

Abstract

This paper describes processing methods and test results on single crystal indium antimonide (InSb) charge injection device (CID) focal plane arrays (FPAs) with SiO₂ made by (1) radio frequency heated chemical vapor deposition (rf CVD); or (2) photoactivated CVD (PACVD). Processing details are more detailed than previously revealed. Related process testing is also discussed.

Citation Download Citation

Joseph B. Underwood and Chih-Hong Chen "Preparation and testing of InSb CID FPA: isolation oxide prepared by radio-frequency chemical vapor deposition and photoactivated CVD", Proc. SPIE 1814, Optical Sensors, (26 October 1992); https://doi.org/10.1117/12.131291

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available