Studies on quantum-well laser

Ming-Shing Wu; Ming Shiann Feng; Huey Liang Hwang

doi:10.1117/12.131256

23 October 1992 Studies on quantum-well laser

Ming-Shing Wu, Ming Shiann Feng, Huey Liang Hwang

Proceedings Volume 1813, Optoelectronic Component Technologies; (1992) https://doi.org/10.1117/12.131256
Event: International Symposium on Optoelectronics in Computers, Communications, and Control, 1992, Hsinchu, Taiwan

Abstract

One-dimensional simulation on quantum-well laser diodes in steady-state had been studied in this work. The electrical behaviors are obtained by solving Poisson's equation and current continuity equations for electrons and holes using a self-consistent method. Band parameters are added in the continuity equations for compositional change in each layer. Different forms of band parameters are used in quantum well regime. The recombination model are revised in the quantum well regime. After the electron and hole profiles are obtained, the peak gain in the quantum well regime are then calculated. The model for the optical matrix element used in this study includes intraband relaxation but without band mixing effects. Wave equation is solved to obtain the optical field intensity and the optical confinement factor. Modal gain and total loss are then calculated. This procedure proceeds until the modal gain is greater than the loss. We use this method to simulate both graded-index separate-confinement heterostructure (GRIN-SCH) quantum-well laser and separate-confinement heterostructure (SCH) quantum- well laser for AlGaAs-GaAs system. Results show that the carriers are well-confined in GRIN-SCH laser, thus less recombination current density present outside the quantum well regime in GRIN-SCH than in SCH. The optical confinement factor depends strongly on the waveguide structures. It may be better confined in GRIN-SCH than in SCH for a set of layer thickness and poorly confined for another set of layer thickness. Thus, the threshold current density depends on the structure. The calculated threshold current density is slightly lower than the experimental result.

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Ming-Shing Wu, Ming Shiann Feng, and Huey Liang Hwang "Studies on quantum-well laser", Proc. SPIE 1813, Optoelectronic Component Technologies, (23 October 1992); https://doi.org/10.1117/12.131256

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KEYWORDS

Quantum wells

Electrons

Heterojunctions

GRIN lenses

Semiconductor lasers

Optoelectronic devices

3D modeling

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