Paper
24 August 1992 Low-threshold GaAlAs/GaAlAs ridge waveguide lasers with dry-etched facets
Szutsun Simon Ou, Jane J. Yang, Michael Jansen, Moshe Sergant, Cynthia A. Hess, Chan A. Tu
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Abstract
Low-threshold, high-performance dry-etched ridge waveguide lasers with dry etched facets are of interest for monolithic two-dimensional coherent applications such as optical interconnects and optoelectronic integrated circuits. We report on low threshold current and wavelength emission < 8000 angstroms laser diodes with short cavity and dry etched facets. The facets are fabricated by reactive ion etching, which provides nearly vertical walls. For the first time, coherent GaAlAs/GaAlAs laser diodes (emission wavelength 7940 angstroms at room temperature) with cw threshold currents as low as 4 mA (room temperature) and 0.8 mA (at 77 degree(s)K) were achieved on a 4-micrometers -wide, 100-micrometers -long device.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Szutsun Simon Ou, Jane J. Yang, Michael Jansen, Moshe Sergant, Cynthia A. Hess, and Chan A. Tu "Low-threshold GaAlAs/GaAlAs ridge waveguide lasers with dry-etched facets", Proc. SPIE 1704, Advances in Optical Information Processing V, (24 August 1992); https://doi.org/10.1117/12.139917
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KEYWORDS
Laser damage threshold

Semiconductor lasers

Gallium arsenide

Waveguide lasers

Reactive ion etching

Photonic integrated circuits

Metalorganic chemical vapor deposition

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