Paper
24 August 1992 All-optical bistable switching with gain in an InGaAs/GaAs quantum-well waveguide
Ta-Wei Kao, Patrick LiKamWa, Alan Miller, M. Ogawa, Robert M. Park, Paul W. Cooke
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Abstract
The gain characteristics of strained layer InGaAs quantum well laser amplifiers grown on GaAs substrates have been characterized using a Ti-sapphire laser in both CW and self-mode- locked configuration. All-optical bistability was achieved in such a device through the nonlinear refractive index that arises as a result of the gain saturation of the diode amplifier at high optical intensities. The Ti-sapphire laser was modified to produce wavelength tunable pulses of the order of 150 fs with a 15 nm spectral bandwidth in order to measure the dynamics of the gain using a time resolved optical pump-probe technique. The gain saturation occurs on the time scale of the pulse width of the laser and the initial recovery is extremely fast. This initial speedy recovery on a time scale of 100 fs is followed by a slower recovery with a time constant of 3 ps followed by a much slower recovery of 500 ps.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ta-Wei Kao, Patrick LiKamWa, Alan Miller, M. Ogawa, Robert M. Park, and Paul W. Cooke "All-optical bistable switching with gain in an InGaAs/GaAs quantum-well waveguide", Proc. SPIE 1704, Advances in Optical Information Processing V, (24 August 1992); https://doi.org/10.1117/12.139919
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KEYWORDS
Gallium arsenide

Quantum wells

Sapphire lasers

Refractive index

Switching

Bistability

Optical amplifiers

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