InP-based heterostructure device technology for ultracold readout applications

Sven C. Nystrom; W. R. Peterson; P. S. Nayar; Robert H. Walden; William E. Stanchina; W. W. Hooper

doi:10.1117/12.60502

1 July 1992 InP-based heterostructure device technology for ultracold readout applications

Sven C. Nystrom, W. R. Peterson, P. S. Nayar, Robert H. Walden, William E. Stanchina, W. W. Hooper

Proceedings Volume 1684, Infrared Readout Electronics; (1992) https://doi.org/10.1117/12.60502
Event: Aerospace Sensing, 1992, Orlando, FL, United States

Abstract

Many IR imaging astronomical and defense applications require focal planes that operate at temperatures less than 20 K. The most widely used readout technology is silicon complementary metal oxide semiconductor (Si CMOS). At ultracold temperatures, however, this technology exhibits undesirable features, such as drain overshoot and kink effects due to frozen out impurities. An InP-based heterostructure device process, under development at Hughes Aircraft Company for high-speed applications, is being assessed for ultracold analog focal plane applications. Benefits should include low power dissipation, low 1/f noise, and radiation hardness. Device performance has been demonstrated at 5 K, comparable with room-temperature performance but with none of the debilitating freezeout effects found in Si CMOS. Focal plane readout circuits based on the InP process are being fabricated.

Citation Download Citation

Sven C. Nystrom, W. R. Peterson, P. S. Nayar, Robert H. Walden, William E. Stanchina, and W. W. Hooper "InP-based heterostructure device technology for ultracold readout applications", Proc. SPIE 1684, Infrared Readout Electronics, (1 July 1992); https://doi.org/10.1117/12.60502

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