Cryogenic measurements of Aerojet GaAs n-JFETs

John H. Goebel; Theodore T. Weber; Arthur D. Van Rheenen; Leon L. Jostad; Joo-Young Kim; Ben Gable

doi:10.1117/12.60499

1 July 1992 Cryogenic measurements of Aerojet GaAs n-JFETs

John H. Goebel, Theodore T. Weber, Arthur D. Van Rheenen, Leon L. Jostad, Joo-Young Kim, Ben Gable

Proceedings Volume 1684, Infrared Readout Electronics; (1992) https://doi.org/10.1117/12.60499
Event: Aerospace Sensing, 1992, Orlando, FL, United States

Abstract

The spectral noise characteristics of Aerojet GaAs n-JFETs have been investigated down to liquid helium temperatures. Voltage noise characterization was performed with the FET in 1) the floating gate mode, 2) the grounded gate mode to determine the lowest noise readings possible and 3) with an extrinsic silicon photodetector at various detector bias voltages, to determine optimum operating conditions. Current noise characterization was measured at the drain in the temperature range 300 to 77 K. Device design and MBE processing are described. Static I-V characterization is done at 300, 77 and 6 K. The measurements indicate that the Aerojet GaAs n-JFET is a quiet and stable device at liquid helium temperatures. Hence, it can be considered as a readout line driver or infrared detector preamplifier as well as a host of other cryogenic applications. Its noise performance is superior to that of Si MOSFETs operating at liquid helium temperatures, and is equal to the best Si n-JFETs operating at 300 K

Citation Download Citation

John H. Goebel, Theodore T. Weber, Arthur D. Van Rheenen, Leon L. Jostad, Joo-Young Kim, and Ben Gable "Cryogenic measurements of Aerojet GaAs n-JFETs", Proc. SPIE 1684, Infrared Readout Electronics, (1 July 1992); https://doi.org/10.1117/12.60499

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