Buried-channel CCDs with high-charge transfer efficiency and large-charge capacity for low-temperature readout of long-wavelength infrared detectors

Ana Lise Lattes; Bor-Yeu Tsaur

doi:10.1117/12.60510

1 July 1992 Buried-channel CCDs with high-charge transfer efficiency and large-charge capacity for low-temperature readout of long-wavelength infrared detectors

Ana Lise Lattes, Bor-Yeu Tsaur

Author Affiliations +

Proceedings Volume 1684, Infrared Readout Electronics; (1992) https://doi.org/10.1117/12.60510
Event: Aerospace Sensing, 1992, Orlando, FL, United States

Abstract

Double ion implantation has been used to fabricate buried-channel CCDs that exhibit good charge transfer efficiency at temperatures down to 50 K while retaining large charge storage capacity. Monolithic IR focal plane arrays integrating such CCDs and Ge(x)Si(1-x)/Si heterojunction detectors show good imaging performance in both the 3-5 micron and 8-10 micron IR spectral bands.

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Ana Lise Lattes and Bor-Yeu Tsaur "Buried-channel CCDs with high-charge transfer efficiency and large-charge capacity for low-temperature readout of long-wavelength infrared detectors", Proc. SPIE 1684, Infrared Readout Electronics, (1 July 1992); https://doi.org/10.1117/12.60510

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