Temperature dependence of semiconductor lasers (Invited Paper)

Anthony F. J. Levi; James O'Gorman; Stefan Schmitt-Rink; Tawee Tanbun-Ek; Debbie L. Coblentz; Ralph A. Logan

doi:10.1117/12.60480

1 July 1992 Temperature dependence of semiconductor lasers (Invited Paper)

Anthony F. J. Levi, James O'Gorman, Stefan Schmitt-Rink, Tawee Tanbun-Ek, Debbie L. Coblentz, Ralph A. Logan

Proceedings Volume 1679, Physics and Simulation of Optoelectronic Devices; (1992) https://doi.org/10.1117/12.60480
Event: Semiconductors '92, 1992, Somerset, NJ, United States

Abstract

For many years it has been assumed that nonradiative recombination plays a dominant role in determining the high temperature performance of long wavelength laser diodes. We show that this view is inconsistent with the measured temperature dependence of spontaneous emission from light emitting diodes. We conclude that net gain primarily determines the temperature sensitivity of threshold in long wavelength semiconductor lasers.

Citation Download Citation

Anthony F. J. Levi, James O'Gorman, Stefan Schmitt-Rink, Tawee Tanbun-Ek, Debbie L. Coblentz, and Ralph A. Logan "Temperature dependence of semiconductor lasers (Invited Paper)", Proc. SPIE 1679, Physics and Simulation of Optoelectronic Devices, (1 July 1992); https://doi.org/10.1117/12.60480

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