Mobility of electrons and holes in semiconductors (Invited Paper)

Gerald D. Mahan; B. A. Sanborn; P. B. Allen

doi:10.1117/12.60479

1 July 1992 Mobility of electrons and holes in semiconductors (Invited Paper)

Gerald D. Mahan, B. A. Sanborn, P. B. Allen

Proceedings Volume 1679, Physics and Simulation of Optoelectronic Devices; (1992) https://doi.org/10.1117/12.60479
Event: Semiconductors '92, 1992, Somerset, NJ, United States

Abstract

The mobility of electrons and holes is calculated in silicon as a function of temperature and the concentration of impurities. Calculations are done for both majority and minority carriers. Special care has been taken in the calculation of the contribution from impurity scattering. Both the dielectric function, and the local field corrections, have been calculated as a function of temperature and impurity concentration. The results agree with the data at low temperature, and at high doping at room temperature.

Citation Download Citation

Gerald D. Mahan, B. A. Sanborn, and P. B. Allen "Mobility of electrons and holes in semiconductors (Invited Paper)", Proc. SPIE 1679, Physics and Simulation of Optoelectronic Devices, (1 July 1992); https://doi.org/10.1117/12.60479

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