Raman scattering in InxGa1-x As/GaAs superlattices grown by molecular-beam epitaxy

Monique T. Constant; N. Matrullo; A. Lorriaux; R. Fauquembergue; Y. Druelle

doi:10.1117/12.60448

1 July 1992 Raman scattering in In_xGa_1-x As/GaAs superlattices grown by molecular-beam epitaxy

Monique T. Constant, N. Matrullo, A. Lorriaux, R. Fauquembergue, Y. Druelle

Proceedings Volume 1678, Spectroscopic Characterization Techniques for Semiconductor Technology IV; (1992) https://doi.org/10.1117/12.60448
Event: Semiconductors '92, 1992, Somerset, NJ, United States

Abstract

The pseudomorphic GaAs/In_xGa_1-xAs structures are of particular interest because of the high value of the In_xGa_1-xAs electron mobility and the good electron confinement in the ternary alloy. Raman scattering experiments were carried out to measure the optical lattice modes of a series of GaAs/In_xGa_1-xAs strained- layer superlattices grown by molecular beam epitaxy on (001) surface of GaAs substrates. The frequency shifts between commensurate and incommensurate layers give a quantitative determination of strain in each type of the strained layers. For this purpose, we have also measured the Raman phonon frequencies of bulk In_xGa_1-1As alloy samples upon a large scale of composition. Double crystal x-ray rocking curve (XRC) data on superlattices are compared to those of Raman experiments. This allows a more valid estimation of the obtained results.

Citation Download Citation

Monique T. Constant, N. Matrullo, A. Lorriaux, R. Fauquembergue, and Y. Druelle "Raman scattering in In_xGa_1-x As/GaAs superlattices grown by molecular-beam epitaxy", Proc. SPIE 1678, Spectroscopic Characterization Techniques for Semiconductor Technology IV, (1 July 1992); https://doi.org/10.1117/12.60448

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