Raman scattering characterization of processing effects on GaAs planar photoconductors

Monique T. Constant; A. Bellarbi; A. Lorriaux; Bertrand Grimbert

doi:10.1117/12.60449

1 July 1992 Raman scattering characterization of processing effects on GaAs planar photoconductors

Monique T. Constant, A. Bellarbi, A. Lorriaux, Bertrand Grimbert

Proceedings Volume 1678, Spectroscopic Characterization Techniques for Semiconductor Technology IV; (1992) https://doi.org/10.1117/12.60449
Event: Semiconductors '92, 1992, Somerset, NJ, United States

Abstract

Raman scattering has been used to probe the effects of both chemical and plasma etching on the photosensitive area of GaAs planar photoconductors, and also to examine the stress at a Si₃N₄ film/n-doped GaAs interface. Electrical performance on the photoconductors has been measured and then correlated to the Raman results. As expected, increasing the number of processes leads to slightly poorer electrical performance.

Citation Download Citation

Monique T. Constant, A. Bellarbi, A. Lorriaux, and Bertrand Grimbert "Raman scattering characterization of processing effects on GaAs planar photoconductors", Proc. SPIE 1678, Spectroscopic Characterization Techniques for Semiconductor Technology IV, (1 July 1992); https://doi.org/10.1117/12.60449

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