Chromeless phase mask by resist silylation

Lothar Bauch; Joachim J. Bauer; Helge H. Dreger; Ulrich A. Jagdhold; B. Lauche; Georg G. Mehliss

doi:10.1117/12.130338

1 June 1992 Chromeless phase mask by resist silylation

Lothar Bauch, Joachim J. Bauer, Helge H. Dreger, Ulrich A. Jagdhold, B. Lauche, Georg G. Mehliss

Proceedings Volume 1674, Optical/Laser Microlithography V; (1992) https://doi.org/10.1117/12.130338
Event: Microlithography '92, 1992, San Jose, CA, United States

Abstract

The resolution of optical microlithography is limited by light diffraction. The contrast for the resist structuring is to low in the neighbour hood of the diffraction limited resolution. Special technologies for e.g. phase shifting, phase masks and spatial filtering techniques have the goal to increase the contrast for the lithographical process in the neighbour hood of the diffraction limit. An improvement of resolution of 0.1 to 0.2 pm compared with conventional image transfer are possible by skilful application this techniques

Citation Download Citation

Lothar Bauch, Joachim J. Bauer, Helge H. Dreger, Ulrich A. Jagdhold, B. Lauche, and Georg G. Mehliss "Chromeless phase mask by resist silylation", Proc. SPIE 1674, Optical/Laser Microlithography V, (1 June 1992); https://doi.org/10.1117/12.130338

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