Paper
1 June 1992 Toward the development of a stable chemically amplified DUV positive photoresist
James W. Thackeray, Diane L. Canistro, Mark Denison, Joseph J. Ferrari, Richard C. Hemond, David R. Medeiros, George W. Orsula, Edward K. Pavelchek, Martha M. Rajaratnam, Roger F. Sinta
Author Affiliations +
Abstract
This paper reports the initial results of an improved chemically amplified, positive-tone photoresist for use in DUV applications. This photoresist is shown to have the following properties: low absorbance at 248 nm (0.22/micrometers ), high resolution (0.35 micrometers lines and spaces in 1.0 micrometers thick resist), and good environmental stability. The resist did not show evidence of `T-tops' nor did any linewidth change occur over a five hour period.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
James W. Thackeray, Diane L. Canistro, Mark Denison, Joseph J. Ferrari, Richard C. Hemond, David R. Medeiros, George W. Orsula, Edward K. Pavelchek, Martha M. Rajaratnam, and Roger F. Sinta "Toward the development of a stable chemically amplified DUV positive photoresist", Proc. SPIE 1672, Advances in Resist Technology and Processing IX, (1 June 1992); https://doi.org/10.1117/12.59722
Lens.org Logo
CITATIONS
Cited by 6 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Deep ultraviolet

Photoresist materials

Photoresist developing

Absorbance

Chemically amplified resists

Transparency

Excimer lasers

Back to Top