Paper
1 June 1992 New positive-acting chemically amplified resist system for electron-beam lithography
Hiroo Koyanagi, Shin'ichi Umeda, Seiki Fukunaga, Tomoyuki Kitaori, Kohtaro Nagasawa
Author Affiliations +
Abstract
This paper is related to a three component chemically amplified positive-acting resist system for electron-beam lithography. The present resist system consists of an acid generator, novolak matrix, and dissolution inhibitor. The novelty of the resist system lies in the dissolution inhibitor; namely, tert.-butoxycarbonyl blocked o-cresolphthalein. The dissolution inhibitor converts into an effectual dissolution promoter by processing after irradiation, while it possesses a high dissolution inhibition capability. This attribute of the dissolution inhibitor resulted in a much improved pattern profile.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hiroo Koyanagi, Shin'ichi Umeda, Seiki Fukunaga, Tomoyuki Kitaori, and Kohtaro Nagasawa "New positive-acting chemically amplified resist system for electron-beam lithography", Proc. SPIE 1672, Advances in Resist Technology and Processing IX, (1 June 1992); https://doi.org/10.1117/12.59754
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CITATIONS
Cited by 3 patents.
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KEYWORDS
Polymers

Chemically amplified resists

Lithography

Chromium

Photomasks

Photomicroscopy

Temperature metrology

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