Equipment, materials, and process interactions in a surface-imaging process: part II

Cesar M. Garza Sr.; Eric J. Solowiej; Mark A. Boehm

doi:10.1117/12.59740

1 June 1992 Equipment, materials, and process interactions in a surface-imaging process: part II

Cesar M. Garza Sr., Eric J. Solowiej, Mark A. Boehm

Proceedings Volume 1672, Advances in Resist Technology and Processing IX; (1992) https://doi.org/10.1117/12.59740
Event: Microlithography '92, 1992, San Jose, CA, United States

Abstract

The advantages of surface-imaging photoresist processes have been well documented in the literature: greater resolution, wider focus budget, and less sensitivity to topography and reflections from the substrate. The diffusion enhanced silylated resist (DESIRE) is a good example of a surface-imaging process. In previous papers we have presented characterization data for this process, and discussed some of the issues involved in its implementation in a manufacturing environment. More recently we have reviewed integration issues evolving from the interactions between the equipment, materials, and process. In this paper we continue our discussion of process integration issues focusing on: (1) electrical discharge, or arcing, during dry-development, and (2) line-width uniformity. Arcing is a very serious problem because of its catastrophic effect on yield. Thus far we have determined that the substrate and equipment influence the occurrence of arching, but further work remains to be done to determine all the possible causes. In previous papers we showed that the linewidth can be controlled across the wafer, and from wafer-to-wafer. By optimizing the magnetic field uniformity in our initial process set up, we were able to control the linewidth to within +/- 8% for 0.63 micrometers lines. However, to maintain this control over time, modifications in the silylation reactor had to be made. Additional improvements in the linewidth uniformity require us to go back and make modifications to the dry-develop reactor to improve the magnetic field uniformity further. These two examples illustrate the need to take a comprehensive or process integration approach to successfully implement this process.

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Cesar M. Garza Sr., Eric J. Solowiej, and Mark A. Boehm "Equipment, materials, and process interactions in a surface-imaging process: part II", Proc. SPIE 1672, Advances in Resist Technology and Processing IX, (1 June 1992); https://doi.org/10.1117/12.59740

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