GaAsP photocathode with 40% QE at 550 nm

John P. Edgecumbe; Verle W. Aebi; Gary A. Davis

doi:10.1117/12.60336

1 June 1992 GaAsP photocathode with 40% QE at 550 nm

John P. Edgecumbe, Verle W. Aebi, Gary A. Davis

Proceedings Volume 1655, Electron Tubes and Image Intensifiers; (1992) https://doi.org/10.1117/12.60336
Event: SPIE/IS&T 1992 Symposium on Electronic Imaging: Science and Technology, 1992, San Jose, CA, United States

Abstract

We have fabricated 18mm format vacuum photodiodes incorporating GaAsP/A1GaAsP photocathodes (Eg 8eV) with P-20 phosphor screens. The photocathode response peaks at approximately 550nm. The quantum efficiency at 550nm is in excess of 55 (electrons per incident photon). The photocathode dark current for these tubes is less than i014 Amps/cm2 at room temperature. We have compared this cathode with the GaAs/AlGaAs photocathode.

Citation Download Citation

John P. Edgecumbe, Verle W. Aebi, and Gary A. Davis "GaAsP photocathode with 40% QE at 550 nm", Proc. SPIE 1655, Electron Tubes and Image Intensifiers, (1 June 1992); https://doi.org/10.1117/12.60336

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