Optically tuned characteristics of an ion-implanted GaAs OPFET

B. B. Pal

doi:10.1117/12.637053

16 December 1992 Optically tuned characteristics of an ion-implanted GaAs OPFET

B. B. Pal

Proceedings Volume 1622, Emerging Optoelectronic Technologies; (1992) https://doi.org/10.1117/12.637053
Event: Emerging OE Technologies, Bangalore, India, 1991, Bangalore, India

Abstract

Optically tuned GaAs OPFET Is a potential device for integrated Optics Optical Communication and Computing. The transient analysis of an ion implanted GaAs OPFET shows that the carriers generated in the gate depletion region due to absorption of photons attains the steady state value after 40 ps. The D. C. analysis indicates that a analysis normally ON device becomes OFF at a higher negative gate voltage compared to the dark condition and a normally OFF device is opened even at zero gate bias. The drainsource current and the transconductance are significantly enhanced due to optical radiation. In the a. c. analysis the optical radiation is modulated by the signal and hence the number of electronhole pairs generated below the gate is also modulated. So the device properties are greatly influenced by the modulated frequency.

Citation Download Citation

B. B. Pal "Optically tuned characteristics of an ion-implanted GaAs OPFET", Proc. SPIE 1622, Emerging Optoelectronic Technologies, (16 December 1992); https://doi.org/10.1117/12.637053

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