Atomic layer epitaxy of YBaCuO for optoelectronic applications

R. A. Skogman

doi:10.1117/12.2321837

1 March 1992 Atomic layer epitaxy of YBaCuO for optoelectronic applications

R. A. Skogman

Proceedings Volume 1597, Progress in High-Temperature Superconducting Transistors and Other Devices II; (1992) https://doi.org/10.1117/12.2321837
Event: Microelectronic Processing Integration, 1991, San Jose, CA, United States

Abstract

A MOCVD based atomic layer epitaxy process is being developed as a potential solution to the problems of film thickness and interface abruptness control which are encountered when fabricating superconductor-insulator-superconductor (SIS) devices using YB_a2C_u3O_7-x. In initial studies, the atomic layer MOCVD process has yielded superconducting YB_a2C_u3O_7-x films with substrate temperatures of 605°C during film growth, and no post deposition anneal. The low temperature process yields a smooth film surface and will reduce interface degradation due to diffusion.

Citation Download Citation

R. A. Skogman "Atomic layer epitaxy of YBaCuO for optoelectronic applications", Proc. SPIE 1597, Progress in High-Temperature Superconducting Transistors and Other Devices II, (1 March 1992); https://doi.org/10.1117/12.2321837

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