All-YBa2C U30 7-x edge-geometry weak links

B. D. Hunt

doi:10.1117/12.2321827

1 March 1992 All-YBa2C U30 7-x edge-geometry weak links

B. D. Hunt

Proceedings Volume 1597, Progress in High-Temperature Superconducting Transistors and Other Devices II; (1992) https://doi.org/10.1117/12.2321827
Event: Microelectronic Processing Integration, 1991, San Jose, CA, United States

Abstract

High quality YBa₂Cu₃O_7-x/normal-metal/YBa₂Cu₃O_7-x edge-geometry weak links have been fabricated with high yield using nonsuperconducting Y-Ba-Cu-O barrier layers deposited by laser ablation at reduced growth temperatures. Devices incorporating 25- 100 Å thick barrier layers exhibit current-voltage characteristics consistent with the resistively-shunted-junction (RSJ) model, as well as ac Josephson steps. Magnetic field modulation of the critical currents shows Fraunhofer-like behavior with a periodicity which scales with device area. The critical currents vary exponentially with barrier thickness, ranging from ~5 x 10³ to 5 x 10⁵ A/cm², indicating an effective normal metal coherence length of 20 A. In addition, the average resistances scale linearly with Y-Ba-Cu-O interlayer thickness and device area. The scaling behavior of the device parameters combined with the well-behaved magnetic field modulation of the critical currents demonstrates good barrier layer uniformity with low pinhole densities. Near the transition temperature, the critical currents exhibit a temperature dependence proportional to (1 -T/Tc)².

Citation Download Citation

B. D. Hunt "All-YBa2C U30 7-x edge-geometry weak links", Proc. SPIE 1597, Progress in High-Temperature Superconducting Transistors and Other Devices II, (1 March 1992); https://doi.org/10.1117/12.2321827

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