Paper
1 February 1992 ECR plasma and etch characterization of photoresist dry etch processes
Kyoung Youn Cho, Dong Won Im
Author Affiliations +
Proceedings Volume 1593, Dry Etch Technology; (1992) https://doi.org/10.1117/12.56918
Event: Microelectronic Processing Integration, 1991, San Jose, CA, United States
Abstract
Photoresist dry etching processes by a down-stream type ECR plasma etcher were characterized. The etched photoresist profile and etch rates were obtained by scanning electron microscope (SEM) photographs and an optical thickness monitoring instrument, respectively. The mask used for PR etch tests has 1 um pitched line & space patterns. It was found that C12 addition to 02 plasma can passivate PR side walls. The etch profiles of PR vary critically with the main coil current changes. The etch rate has maximum of 4800 Å/min and the etch uniformity has a minimum value of 5.4 %. The dc bias voltage (Vdc) variations are closely related to the etch profiles. Vdc decreases when PR etching is completed and substrates are exposed to the plasma. The wafers with different thin film materials induce different Vdc for a same process condition. The plasma properties were measured by a Langmuir probe. The N2 addition to 02 plasma were also tested. However, the critical effect of the main coil current was not found for the N2 processes. A model was formulated to explain the difference between C12 processes and N2 processes with an equivalent circuit method.
© (1992) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kyoung Youn Cho and Dong Won Im "ECR plasma and etch characterization of photoresist dry etch processes", Proc. SPIE 1593, Dry Etch Technology, (1 February 1992); https://doi.org/10.1117/12.56918
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KEYWORDS
Etching

Plasma

Semiconducting wafers

Plasma etching

Magnetism

Dry etching

Photoresist materials

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