Heterostructure photosensitive memory

Vladimir A. Manasson; Lev S. Sadovnik; Ray T. Chen

doi:10.1117/12.50669

1 December 1991 Heterostructure photosensitive memory

Vladimir A. Manasson, Lev S. Sadovnik, Ray T. Chen

Proceedings Volume 1559, Photopolymer Device Physics, Chemistry, and Applications II; (1991) https://doi.org/10.1117/12.50669
Event: San Diego, '91, 1991, San Diego, CA, United States

Abstract

A new photosensitive memory device with semiconductor-thin polymer-semiconductor (STPS) structure is described. A `writing' light pulse drastically changes a basic current mechanism. As a result, the dark current increases many times. Moreover, new quality phenomena appears, such as photocurrent amplification and photo-induced self-oscillations.

Citation Download Citation

Vladimir A. Manasson, Lev S. Sadovnik, and Ray T. Chen "Heterostructure photosensitive memory", Proc. SPIE 1559, Photopolymer Device Physics, Chemistry, and Applications II, (1 December 1991); https://doi.org/10.1117/12.50669

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