Strain in semiconductor structures and devices

David J. Dunstan; Alfred R. Adams

doi:10.1117/12.56995

1 February 1992 Strain in semiconductor structures and devices

David J. Dunstan, Alfred R. Adams

Proceedings Volume 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits; (1992) https://doi.org/10.1117/12.56995
Event: Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, 1992, Madras, India

Abstract

We review the use of large strains both in the design an in the study of semiconductor structures and devices. Large hydrostatic pressure may be applied to samples and devices. This changes the band structure qualitatively without changing the crystal symmetry. We present some results obtained studying lasers by this technique, which reveal the loss mechanism dominating the thresholding current. A new high-pressure determination of the InGaAs/GaAs band offset ratio will be discussed. Axial strain may be applied to samples, or may be built into semiconductor epilayers by using thin layers of non-lattice matched compounds. This changes the crystal symmetry in ways that can benefit device performance. It also enables the structure to depart from the substrate lattice constant, which gives a new freedom to device design. Some recent advances in the InGaAlAs strained-layer system will be described.

Citation Download Citation

David J. Dunstan and Alfred R. Adams "Strain in semiconductor structures and devices", Proc. SPIE 1523, Conference on Physics and Technology of Semiconductor Devices and Integrated Circuits, (1 February 1992); https://doi.org/10.1117/12.56995

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