InGaAs HEMT MMIC low-noise amplifier and doublers for EHF SATCOM ground terminals

P. Daniel Chow; J. Lester; P. Huang; William L. Jones

doi:10.1117/12.44478

1 July 1991 InGaAs HEMT MMIC low-noise amplifier and doublers for EHF SATCOM ground terminals

P. Daniel Chow, J. Lester, P. Huang, William L. Jones

Proceedings Volume 1475, Monolithic Microwave Integrated Circuits for Sensors, Radar, and Communications Systems; (1991) https://doi.org/10.1117/12.44478
Event: Orlando '91, 1991, Orlando, FL, United States

Abstract

A K-band MMIC LNA and a family of MMIC frequency doublers were designed and fabricated using the planar-doped pseudomorphic InGaAs HEMT technology for future EHF satellite communication terminal transceiver applications. The InGaAs HEMT LNA showed less than 2 dB noise figure and more than 32 dB gain from 21 to 23 GHz. The Ku-, K-, and Q-band MMIC HEMT doublers demonstrated low conversion loss and wideband operation. They showed 10 dBm, 8 dBm, and 0 dBm output powers, and 2.5 dB, 4.5 dB, and 8.6 dB conversion losses at 17.4 GHz, 22.25 GHz, and 43.5 GHz, respectively.

Citation Download Citation

P. Daniel Chow, J. Lester, P. Huang, and William L. Jones "InGaAs HEMT MMIC low-noise amplifier and doublers for EHF SATCOM ground terminals", Proc. SPIE 1475, Monolithic Microwave Integrated Circuits for Sensors, Radar, and Communications Systems, (1 July 1991); https://doi.org/10.1117/12.44478

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