Paper
1 July 1991 Coplanar waveguide InP-based HEMT MMICs for microwave and millimeter wave applications
Chia-Shing Chou, K. Litvin, Larry E. Larson, Steven E. Rosenbaum, Loi D. Nguyen, Umesh K. Mishra, Mark Lui, M. Thompson, Catherine M. H. Ngo, M. Melendes
Author Affiliations +
Abstract
We have developed and fabricated a variety of single-stage coplanar waveguide MMIC amplifiers based on our InP-based AlInAs/GaInAs HEMT device technology. The measured f(t) of 0.15-micron devices was 120 GHz and fmax was 200 GHz. The dc transconductance was greater than 720 mS/mm. The 12-GHz single-stage MMIC amplifier had a noise figure of 1.3 dB with an associated gain of 16.0 dB. A 35 GHz single-stage amplifier had a measured gain of 10.9 dB and a measured input return loss of -14.4 dB. A 60 GHz single-stage amplifier had a measured gain of 8.4 dB and a measured input return loss of -18.4 dB.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chia-Shing Chou, K. Litvin, Larry E. Larson, Steven E. Rosenbaum, Loi D. Nguyen, Umesh K. Mishra, Mark Lui, M. Thompson, Catherine M. H. Ngo, and M. Melendes "Coplanar waveguide InP-based HEMT MMICs for microwave and millimeter wave applications", Proc. SPIE 1475, Monolithic Microwave Integrated Circuits for Sensors, Radar, and Communications Systems, (1 July 1991); https://doi.org/10.1117/12.44490
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KEYWORDS
Amplifiers

Field effect transistors

Waveguides

Microwave radiation

Photomicroscopy

Scanning electron microscopy

Resistance

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