Novel quinonediazide-sensitized photoresist system for i-line and deep-UV lithography

Seiki Fukunaga; Tomoyuki Kitaori; Hiroo Koyanagi; Shin'ichi Umeda; Kohtaro Nagasawa

doi:10.1117/12.46393

1 June 1991 Novel quinonediazide-sensitized photoresist system for i-line and deep-UV lithography

Seiki Fukunaga, Tomoyuki Kitaori, Hiroo Koyanagi, Shin'ichi Umeda, Kohtaro Nagasawa

Proceedings Volume 1466, Advances in Resist Technology and Processing VIII; (1991) https://doi.org/10.1117/12.46393
Event: Microlithography, 1991, San Jose, CA, United States

Abstract

this paper describes a novel resist material for i-line or deep uv lithography, consisting of imidazoylsulfonyl-naphthoquinonediazide (IPAC) and co(p-tert.-butylphenol-Bisphenol A)-formaldehyde resin (PBR). Along with the resist material comprising IPAC and PBR, another resist material of which matrix resin is substituted with a chemically modified polyvinylphonol (MPVP) is also presented. PBR and MPVP are considerably transparent at i-line and deep uv regions.

Citation Download Citation

Seiki Fukunaga, Tomoyuki Kitaori, Hiroo Koyanagi, Shin'ichi Umeda, and Kohtaro Nagasawa "Novel quinonediazide-sensitized photoresist system for i-line and deep-UV lithography", Proc. SPIE 1466, Advances in Resist Technology and Processing VIII, (1 June 1991); https://doi.org/10.1117/12.46393

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